Modeling of mismatch effect in submicron MOSFETs based on BSIM3 model and parametric tests

Abstract

Mismatch between identically designed MOS transistors plays an important role in the performance of analog circuits. This paper reports a MOS transistor mismatch model applicable for submicron CMOS technology and developed based on the industry standard BSIM3v3 model. A quick way to estimate drain current mismatch based on parametric test data was also… (More)

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@article{Zhang2001ModelingOM, title={Modeling of mismatch effect in submicron MOSFETs based on BSIM3 model and parametric tests}, author={Qizhou Zhang and J. J. Liou and John McMacken and J. Ross Thomson and Paul Layman}, journal={IEEE Electron Device Letters}, year={2001}, volume={22}, pages={133-135} }