Modeling of irregular non-planar transition effects formed by bulk micromachining on high resistivity silicon wafer

Abstract

An irregular non-planar transition effect, that connects a 50Omega microstrip to a 16Omega partially shielded valley microstrip is studied. The transition effect is modeled using LC T-network and distributed transmission line methods. The circuit model results show agreement with full-wave simulation and measurement data up to approximately 32GHz

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Cite this paper

@article{Zheng2006ModelingOI, title={Modeling of irregular non-planar transition effects formed by bulk micromachining on high resistivity silicon wafer}, author={Chenglin Zheng and S. R. Banerjee and R. A. Drayton}, journal={Digest of Papers. 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems}, year={2006}, pages={4 pp.-} }