Modeling of high-voltage NMOS transistors using extended BSIM3 model

@article{Pieczynski2008ModelingOH,
  title={Modeling of high-voltage NMOS transistors using extended BSIM3 model},
  author={J. Pieczynski and I. Doncov},
  journal={2008 15th International Conference on Mixed Design of Integrated Circuits and Systems},
  year={2008},
  pages={75-80}
}
This paper presents a procedure for modeling and electrical parameter extraction of high-voltage NMOS transistors from the 1.2um CMOS/pressure sensor process. The well known and very robust Berkeley BSIM3 model was applied as a basis for modeling. Unfortunately BSIM3 does not include such specific high-voltage effects as drain extension, quasi-saturation… CONTINUE READING