Highly Influenced

@article{Pieczynski2008ModelingOH, title={Modeling of high-voltage NMOS transistors using extended BSIM3 model}, author={J. Pieczynski and I. Doncov}, journal={2008 15th International Conference on Mixed Design of Integrated Circuits and Systems}, year={2008}, pages={75-80} }

- Published 2008 in 2008 15th International Conference on Mixed…

This paper presents a procedure for modeling and electrical parameter extraction of high-voltage NMOS transistors from the 1.2um CMOS/pressure sensor process. The well known and very robust Berkeley BSIM3 model was applied as a basis for modeling. Unfortunately BSIM3 does not include such specific high-voltage effects as drain extension, quasi-saturation… CONTINUE READING

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