Modeling of graphene/SiO2/Si(n) based metal-insulator-semiconductor solar cells

@article{Islam2016ModelingOG,
  title={Modeling of graphene/SiO2/Si(n) based metal-insulator-semiconductor solar cells},
  author={Muhammad Johirul Islam and Md. Mahmudul Hasan and Rifat Sami and Md. Iqbal Bahar Chowdhury},
  journal={2016 4th International Conference on the Development in the in Renewable Energy Technology (ICDRET)},
  year={2016},
  pages={1-4}
}
In this work a graphene based MIS structure for solar energy conversion has been modeled and analyzed. The MIS structure is formed by inserting an oxide layer in the conventional graphene/n-Si Schottky structure to obtain improved performance. Simulation of the model for this MIS structure shows this performance improvement. Using the simulation results this work also analyzes the effects of semiconductor layer width and semiconductor doping level on the current-voltage characteristics.