Modeling of gettering of precipitated impurities from Si for carrier lifetime improvement in solar cell applications

@inproceedings{Plekhanov1999ModelingOG,
  title={Modeling of gettering of precipitated impurities from Si for carrier lifetime improvement in solar cell applications},
  author={P. S. Plekhanov and R. Gafiteanu and Ulrich M. Goesele and Teh Y. Tan},
  year={1999}
}
Physical and numerical modeling of impurity gettering from multicrystalline Si for solar cell production has been carried out using Fe as a model impurity. Calculated change of nonradiative recombination coefficient of minority carriers in the course of gettering is used as a tool for evaluating the gettering efficiency. A derivation of the capture cross section of impurity precipitates, as compared to single atom recombination centers, is presented. Low efficiency of the conventional… CONTINUE READING

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