Modeling of electron transport in resonant-tunneling heterostructures on a base of wide bandgap gallium nitride's combinations

Abstract

Numerical method for calculation of electron transport in GaN/AlGaN resonant-tunneling heterostructures is developed. It has been shown with using this method that the external electric field symmetrizes the potential profile of resonant-tunneling diode and increases a value of transparency coefficient's maximum. 

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