Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon

@article{Masetti1983ModelingOC,
  title={Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon},
  author={G. Masetti and Maurizio Severi and Sandro Solmi},
  journal={IEEE Transactions on Electron Devices},
  year={1983},
  volume={30},
  pages={764-769}
}
New carrier mobility data for both arsenic- and boron-doped silicon are presented in the high doping range. The data definitely show that the electron mobility in As-doped silicon is significantly lower than in P-doped silicon for carrier concentrations higher than 1019cm-3. By integrating these data with those previously published, empirical relationships able to model the carrier mobility against carrier concentration in the whole experimental range examined to date (about eight decades in… CONTINUE READING
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