Modeling of Silicon Dioxide Chemical Vapor Deposition from Tetraethoxysilane and Ozone

@inproceedings{Romet2001ModelingOS,
  title={Modeling of Silicon Dioxide Chemical Vapor Deposition from Tetraethoxysilane and Ozone},
  author={Sebastien Romet and Michel F. Couturier and Thomas K. Whidden},
  year={2001}
}
Chemical Vapor Deposition (CVD) of silicon dioxide from tetraethoxysilane (TEOS) and ozone was modeled using CHEMKIN-III simulation software. Modeling assumed that film growth proceeds via the fast oxidation of silicon-bearing compounds by ozone or atomic oxygen at the substrate surface. The objective of the study was to use kinetic data from the literature to develop a reliable reaction model with no more than one adjustable parameter. The simulations established that direct contribution of… CONTINUE READING