Modeling of Signal Generation Function and Electron Penetration Effects on the EBIC Signal of Schottky diodes of Ge

  • Beggah Yamina, Lahreche Abderezzek, Aouled Aissa, 18000 Jijel
  • Published 2007

Abstract

The present study shows that simple forms for the generation functions, if connected to appropriate electronic path (electron range), can be successfully used to describe the collection efficiency in EBIC devices. Both uniform and point-like source generation functions are considered here and for which two phenomenological electronic paths, depending on the… (More)

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