Modeling of LT-GaAs and LT-Al0.3Ga0.7As MISFET devices

@inproceedings{Rao1999ModelingOL,
  title={Modeling of LT-GaAs and LT-Al0.3Ga0.7As MISFET devices},
  author={Rapeta V.V.V.J. Rao and Tow Chong Chong and L. S. Tan and Wai Shing Lau and Jj. Liou},
  year={1999}
}
A theoretical model is developed for LT-GaAs and LT-Al0.3Ga0.7As MISFETs and is compared with experimental data. This model is based upon the analytical solution of Poisson's equation, the current continuity equation and the Chang-Fetterman velocity-field equation. When the device is operating in the linear region and knee region the one-dimensional Poisson equation has been considered. When the device is in the saturation regime, the two-dimensional Poisson equation has been solved… CONTINUE READING

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