Modeling of Bias Dependent Fluctuations of Flicker Noise of MOSFETs

Abstract

Drain and gate bias dependent fluctuations of flicker noise of MOSFETs are explained in terms of carrier concentration distributions in a MOSFET channel. A proposed model well describes the increase of the fluctuation in the saturation region of operation. In addition, the gate bias dependence of the fluctuation in the saturation region can also be… (More)

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