Modeling fatigue life of power semiconductor devices with ε-N fields

@article{Bluder2014ModelingFL,
  title={Modeling fatigue life of power semiconductor devices with ε-N fields},
  author={Olivia Bluder and Kathrin Plankensteiner and Michael Nelhiebel and Walther Heinz and Christian Leitner},
  journal={Proceedings of the Winter Simulation Conference 2014},
  year={2014},
  pages={2609-2616}
}
In this study, fatigue life of power semiconductor devices measured in cycles to failure during an accelerated stress test in a climate chamber is analyzed. The tested devices fail mainly in a short circuit event and their physical inspection reveals cracks in the power metallization. Commonly, the time till fracture of macroscopic metal layers is modeled… CONTINUE READING