Modeling and extraction of SiGe HBT noise parameters from measured Y-parameters and accounting for noise correlation

@article{Yau2006ModelingAE,
  title={Modeling and extraction of SiGe HBT noise parameters from measured Y-parameters and accounting for noise correlation},
  author={K. H. K. Yau and S. P. Voinigescu},
  journal={Digest of Papers. 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems},
  year={2006},
  pages={4 pp.-}
}
The technique to extract the SiGe HBT noise parameters only from the measured y-parameters is extended to account for the presence of noise correlation. Unlike earlier publications, this method does not need to fit the noise transit time to measured noise data. The technique was validated using 2D device simulations and measured noise parameter data. It was found that the NFMIN of SiGe HBTs with fT /fMAX of 160 GHz is approximately 1dB lower at 60 GHz when noise correlation is accounted for… CONTINUE READING
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