Modeling and characterization of sacrificial polysilicon etching using vapor-phase xenon difluoride

@article{Brazzle2004ModelingAC,
  title={Modeling and characterization of sacrificial polysilicon etching using vapor-phase xenon difluoride},
  author={J. Brazzle and M. Dokmeci and C. Mastrangelo},
  journal={17th IEEE International Conference on Micro Electro Mechanical Systems. Maastricht MEMS 2004 Technical Digest},
  year={2004},
  pages={737-740}
}
  • J. Brazzle, M. Dokmeci, C. Mastrangelo
  • Published 2004
  • Materials Science
  • 17th IEEE International Conference on Micro Electro Mechanical Systems. Maastricht MEMS 2004 Technical Digest
Xenon Difluoride is an isotropic dry etch which is increasingly being used to release structures made of polysilicon. By using a vapor-phase XeF/sub 2/ pulse etching system we have investigated the effects of aperture size and thickness of polysilicon films versus etch rates. Decreasing the aperture size resulted in reduced etch rates. For a 100 /spl mu/m wide structure the etch rates varied from 1.38 /spl mu/m/min (1.25 /spl mu/m thick polysilicon) down to 0.41 /spl mu/m/min (0.1 /spl mu/m… Expand

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