Modeling and characterization of sacrificial polysilicon etching using vapor-phase xenon difluoride

@article{Brazzle2004ModelingAC,
  title={Modeling and characterization of sacrificial polysilicon etching using vapor-phase xenon difluoride},
  author={J. D. Brazzle and M. Dokmeci and C. H. Mastrangelo},
  journal={17th IEEE International Conference on Micro Electro Mechanical Systems. Maastricht MEMS 2004 Technical Digest},
  year={2004},
  pages={737-740}
}
  • J.D. Brazzle, M. Dokmeci, C.H. Mastrangelo
  • Published 2004
  • Materials Science
  • 17th IEEE International Conference on Micro Electro Mechanical Systems. Maastricht MEMS 2004 Technical Digest
  • Xenon Difluoride is an isotropic dry etch which is increasingly being used to release structures made of polysilicon. By using a vapor-phase XeF/sub 2/ pulse etching system we have investigated the effects of aperture size and thickness of polysilicon films versus etch rates. Decreasing the aperture size resulted in reduced etch rates. For a 100 /spl mu/m wide structure the etch rates varied from 1.38 /spl mu/m/min (1.25 /spl mu/m thick polysilicon) down to 0.41 /spl mu/m/min (0.1 /spl mu/m… CONTINUE READING

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