Modeling and analyzing NBTI in the presence of Process Variation

@article{Siddiqua2011ModelingAA,
  title={Modeling and analyzing NBTI in the presence of Process Variation},
  author={Taniya Siddiqua and Sudhanva Gurumurthi and Mircea R. Stan},
  journal={2011 12th International Symposium on Quality Electronic Design},
  year={2011},
  pages={1-8}
}
With continuousscaling of transistors in each technology generation, NBTI and Process Variation (PV) have become very important silicon reliability problems for the microprocessor industry. In this paper, we develop an analytical model to capture the impact of NBTI in the presence of PV for use in architecture simulations. We capture the following aspects in the model: i) variation in NBTI related to stress and recovery due to workloads, ii) temporal variation in NBTI due to Random Charge… CONTINUE READING
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