Modeling and Simulation of Charge-Pumping Characteristics for LDD-MOSFET Devices With LOCOS Isolation

@article{Tahi2010ModelingAS,
  title={Modeling and Simulation of Charge-Pumping Characteristics for LDD-MOSFET Devices With LOCOS Isolation},
  author={Hakim Tahi and Boualem Djezzar and Bacharia Nadji},
  journal={IEEE Transactions on Electron Devices},
  year={2010},
  volume={57},
  pages={2892-2901}
}
We propose a model for the so-called constant-amplitude charge-pumping (CP) characteristics, giving the Elliot Gaussian-like CP current curve (I<sub>CP</sub>-V<sub>L</sub>) of lightly doped drain (LDD) MOSFET with local oxidation of silicon (LOCOS). This method is based on modulation of the contributing active-channel area (A<sub>G</sub>) to the I<sub>CP</sub>-V<sub>L</sub> curve, depending on the position of the high and low levels of the gate signal voltage. In addition, it allows to separate… CONTINUE READING

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