Modeling and Characterization of Schottky Diode on AlGaAs/GaAs HEMT Structure for Rectenna Device

Abstract

The modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device is presented. The rectenna device can be used as a wireless power supply where it can capture microwave power and convert to the dc power to generate the others devices or circuits on a chip. Design and simulation of Schottky diode on AlGaAs/GaAs HEMT… (More)
DOI: 10.1109/AMS.2008.187

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@article{Parimon2008ModelingAC, title={Modeling and Characterization of Schottky Diode on AlGaAs/GaAs HEMT Structure for Rectenna Device}, author={Norfarariyanti Bte Parimon and Siti Suhaila Bte Mohd Yusof and Abdul Manaf Bin Hashim}, journal={2008 Second Asia International Conference on Modelling & Simulation (AMS)}, year={2008}, pages={987-989} }