Modeling and Analysis of Leakage Currents in Double-Gate Technologies

@article{Mukhopadhyay2006ModelingAA,
  title={Modeling and Analysis of Leakage Currents in Double-Gate Technologies},
  author={Saibal Mukhopadhyay and Keunwoo Kim and Ching-Te Chuang and Kaushik Roy},
  journal={IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems},
  year={2006},
  volume={25},
  pages={2052-2061}
}
This paper models and analyzes subthreshold and gate leakage currents in different double-gate (DG) devices, namely, a doped body symmetric device with polysilicon gates, an intrinsic body symmetric device with metal gates, and an intrinsic body asymmetric device with different front and back gate materials. The effect of variations in device parameters on the leakage components is also analyzed. Using the developed models, digital circuits (logic gates and static random access memory cells… CONTINUE READING