Modeling Short-Channel Effect of Elliptical Gate-All-Around MOSFET by Effective Radius

@article{Zhang2011ModelingSE,
  title={Modeling Short-Channel Effect of Elliptical Gate-All-Around MOSFET by Effective Radius},
  author={Lining Zhang and Lin Li and Jin He and Mansun Chan},
  journal={IEEE Electron Device Letters},
  year={2011},
  volume={32},
  pages={1188-1190}
}
Gate-all-around (GAA) MOSFETs with elliptical cross section are studied in this letter. From the solution of the Poisson equation, an effective radius concept (<i>R</i><sub>eff</sub>) is proposed to convert elliptical GAA MOSFETs into equivalent circular GAA MOSFETs for the study of short-channel effect. The <i>R</i><sub>eff</sub> approach is used to estimate the subthreshold swing, drain-induced barrier lowering, and <i>Q</i><sub>on</sub>/<i>Q</i><sub>off</sub> ratio of elliptical GAA MOSFETs… CONTINUE READING

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