“Modeling Memristive Biosensors”


In the present work, a computational study is carried out investigating the relationship between the biosensing and the electrical characteristics of two-terminal Schottkybarrier silicon nanowire devices. The model suggested successfully reproduces computationally the experimentally obtained electrical behavior of the devices prior to and after the surface bio-modification. Throughout modeling and simulations, it is confirmed that the nanofabricated devices present electrical behavior fully equivalent to that of a memristor device, according to literature. Furthermore, the model introduced successfully reproduces computationally the voltage gap appearing in the current to voltage characteristics for nanowire devices with biomodified surface. Overall, the present study confirms the implication of the memristive effect for bio sensing applications, therefore demonstrating the Memristive Biosensors. Keywords—Biosensor; Memristor; Silicon nanowire; Schottky

Extracted Key Phrases

6 Figures and Tables

Cite this paper

@inproceedings{Tzouvadaki2015ModelingMB, title={“Modeling Memristive Biosensors”}, author={Ioulia Tzouvadaki and Francesca Puppo and Marie-Agnes Doucey and Giovanni De Micheli and Sandro Carrara}, year={2015} }