Modeling CMOS Tunneling Currents Through Ultrathin Gate Oxide Due to Conduction-and Valence-Band Electron and Hole Tunneling

@inproceedings{Lee2001ModelingCT,
  title={Modeling CMOS Tunneling Currents Through Ultrathin Gate Oxide Due to Conduction-and Valence-Band Electron and Hole Tunneling},
  author={Wen-Chin Lee and Chenming Calvin Hu},
  year={2001}
}
A semi-empirical model is proposed to quantify the tunneling currents through ultrathin gate oxides (1–3.6 nm). As a multiplier to a simple analytical model [1], [2], a correction function is introduced to achieve universal applicability to all different combinations of bias polarities (inversion and accumulation), gate materials (N, P, Si, SiGe) and tunneling processes. Each coefficient of the correction function is given a physical meaning and determined by empirical fitting. This new model… CONTINUE READING
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