Modeled tunnel currents for high dielectric constant dielectrics

@inproceedings{Vogel1998ModeledTC,
  title={Modeled tunnel currents for high dielectric constant dielectrics},
  author={Eric M. Vogel and Khaled Ahmed and Brian E. Hornung and William K. Henson and P. K. Mclarty and Gerald Lucovsky and John R. Hauser and Jimmie J. Wortman},
  year={1998}
}
The effect of dielectric constant and barrier height on the WKB modeled tunnel currents of MOS capacitors with effective oxide thickness of 2.0 nm is described. We first present the WKB numerical model used to determine the tunneling currents. The results of this model indicate that alternative dielectrics with higher dielectric constants show lower tunneling currents than SiO/sub 2/ at expected operating voltages. The results of SiO/sub 2//alternative dielectric stacks indicate currents which… CONTINUE READING

Figures and Tables from this paper.

Citations

Publications citing this paper.
SHOWING 1-10 OF 51 CITATIONS

Effect of High-K Spacer on the Performance of Non-Uniformly doped DG-MOSFET

  • 2019 Devices for Integrated Circuit (DevIC)
  • 2019
VIEW 1 EXCERPT
CITES METHODS

Charge pumping test technique using CMOS ring oscillator on leakage issue

Yongbo Liu, Zhengyong Zhu, +3 authors Chao Zhao
  • Microelectronics Journal
  • 2017
VIEW 1 EXCERPT
CITES BACKGROUND

Enhancing the SRAM performance of gate-stacked DG-MOSFET

  • 2017 2nd IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology (RTEICT)
  • 2017
VIEW 1 EXCERPT
CITES BACKGROUND

FILTER CITATIONS BY YEAR

2002
2019

CITATION STATISTICS

  • 1 Highly Influenced Citations

References

Publications referenced by this paper.
SHOWING 1-10 OF 22 REFERENCES