Model for the Resistive Switching Effect in $ \hbox{HfO}_{2}$ MIM Structures Based on the Transmission Properties of Narrow Constrictions

@article{Miranda2010ModelFT,
  title={Model for the Resistive Switching Effect in \$ \hbox\{HfO\}_\{2\}\$ MIM Structures Based on the Transmission Properties of Narrow Constrictions},
  author={Enrique Alfredo Miranda and Christian Walczyk and Christian Wenger and Thomas Schr{\"o}der},
  journal={IEEE Electron Device Letters},
  year={2010},
  volume={31},
  pages={609-611}
}
A physics-based analytical model for the current-voltage (I-V) characteristics corresponding to the low and high resistive states in electroformed metal-insulator-metal structures with HfO2 layers is proposed. The model relies on the Landauer theory for the electron transport in mesoscopic systems. The switching phenomenon is ascribed to the modulation of the constriction's bottleneck cross-sectional area associated with atomic rearrangements within the confinement path. The extracted parameter… CONTINUE READING
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