Mobility of the two-dimensional electron gas at selectively doped n -type AlxGa1-xAs/GaAs heterojunctions with controlled electron concentrations.

@article{Hirakawa1986MobilityOT,
  title={Mobility of the two-dimensional electron gas at selectively doped n -type AlxGa1-xAs/GaAs heterojunctions with controlled electron concentrations.},
  author={Hirakawa and Sakaki},
  journal={Physical review. B, Condensed matter},
  year={1986},
  volume={33 12},
  pages={
          8291-8303
        }
}
We describe our systematic study of the two-dimensional electron mobilities \ensuremath{\mu} of n-type ${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$As/GaAs heterojunctions, in particular their dependence on the electron concentration ${N}_{s}$ and the temperatures T, in a variety of field-effect transistors in which the impurity locations are precisely controlled to vary \ensuremath{\mu} over the wide range of 5\ifmmode\times\else\texttimes\fi{}${10}^{3}$ to 1… CONTINUE READING

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