Mobility measurement and degradation mechanisms of MOSFETs made with ultrathin high-k dielectrics

@article{Zhu2004MobilityMA,
  title={Mobility measurement and degradation mechanisms of MOSFETs made with ultrathin high-k dielectrics},
  author={Wenjuan Zhu and Jin-Ping Han and T W Ma},
  journal={IEEE Transactions on Electron Devices},
  year={2004},
  volume={51},
  pages={98-105}
}
Accurate measurements and degradation mechanisms of the channel mobility for MOSFETs with HfO/sub 2/ as the gate dielectric have been systematically studied in this paper. The error in mobility extraction caused by a high density of interface traps for a MOSFET with high-k gate dielectric has been analyzed, and a new method to correct this error has been proposed. Other sources of error in mobility extraction, including channel resistance, gate leakage current, and contact resistance for a… CONTINUE READING
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