Mobility in semiconducting carbon nanotubes at finite carrier density.

@article{Perebeinos2006MobilityIS,
  title={Mobility in semiconducting carbon nanotubes at finite carrier density.},
  author={Vasili Perebeinos and Jerry Tersoff and Phaedon Avouris},
  journal={Nano letters},
  year={2006},
  volume={6 2},
  pages={205-8}
}
Carbon nanotube field-effect transistors operate over a wide range of electron or hole density, controlled by the gate voltage. Here we calculate the mobility in semiconducting nanotubes as a function of carrier density and electric field, for different tube diameters and temperatures. The low-field mobility is a nonmonotonic function of carrier density and varies by as much as a factor of 4 at room temperature. At low density, with increasing field the drift velocity reaches a maximum and then… CONTINUE READING