Mobility Investigation by Geometrical Magnetoresistance in Fully Depleted MOSFETs and FinFETs

@article{Chang2014MobilityIB,
  title={Mobility Investigation by Geometrical Magnetoresistance in Fully Depleted MOSFETs and FinFETs},
  author={Sung-Jae Chang and Maryline Bawedin and Sorin Cristoloveanu},
  journal={IEEE Transactions on Electron Devices},
  year={2014},
  volume={61},
  pages={1979-1986}
}
The operation of advanced planar MOSFET and FinFET transistors on SOI is investigated under high magnetic field. The geometrical magnetoresistance is observed when the Hall field is suppressed thanks to the device geometry. This method is free from any assumptions (oxide and body thickness, effective channel length, etc.) and delivers the most accurate and indisputable value of carrier mobility. Our measurements show, for the first time, the mobility behavior in FinFETs with double- and triple… CONTINUE READING

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