Mobility Improvement and Microwave Characterization of a Graphene Field Effect Transistor With Silicon Nitride Gate Dielectrics

Abstract

We report on the influence of a silicon nitride gate dielectric in graphene-based field-effect transistors (FETs). The silicon nitride is formed by a plasma-enhanced chemical vapor deposition method. The process is based on a low-density plasma at a high pressure (1 torr), which results in a low degradation of the graphene lattice during the top-gate… (More)

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Cite this paper

@article{Habibpour2011MobilityIA, title={Mobility Improvement and Microwave Characterization of a Graphene Field Effect Transistor With Silicon Nitride Gate Dielectrics}, author={Omid Habibpour and Sergey Cherednichenko and J. Vukusic and Jan Stake}, journal={IEEE Electron Device Letters}, year={2011}, volume={32}, pages={871-873} }