MnSi and MnSi2−x single crystals growth by Ga flux method and properties

@inproceedings{Okada2001MnSiAM,
  title={MnSi and MnSi2−x single crystals growth by Ga flux method and properties},
  author={Shigeru Okada and Toetsu Shishido and Makoto Ogawa and Fumio Matsukawa and Yoshio Ishizawa and Kazuo Nakajima and Tsuguo Fukuda and Torsten Lundstroem},
  year={2001}
}
MnSi and MnSi 2- single crystals were grown from high temperature gallium metal fluxes by slowly cooling the melt in argon atmosphere. The growth conditions of MnSi and MnSi 2-x (Mn 15 Si 26 ) crystals with relatively large size, namely MnSi about 0.06 x 0.52 x 2.43 mm 3 and Mn 15 Si 26 about 0.40 × 0.55 x 0.61 mm 3 were established. MnSi crystals were generally obtained in the form of needle-like prisms extending in the direction and with well-developed (111) faces. Mn 15 Si 26 crystals had a… CONTINUE READING