Mitigation of substrate coupling effects in RF switch by localized substrate removal using laser processing

@inproceedings{Bhaskar2020MitigationOS,
  title={Mitigation of substrate coupling effects in RF switch by localized substrate removal using laser processing},
  author={Arun Bhaskar and Justine Philippe and Etienne Okada and Flavie Braud and Jean-François Robillard and Cedric Durand and Fr{\'e}d{\'e}ric Gianesello and Daniel Gloria and Christophe Gaqui{\`e}re and Emmanuel Dubois},
  year={2020}
}
Mitigation of substrate coupling effects in RF switch by localized substrate removal using laser processing 

References

SHOWING 1-10 OF 33 REFERENCES
Application-oriented performance of RF CMOS technologies on flexible substrates
Ultimate-thinning-and-transfer-bonding (UTTB) of RF SOI-CMOS chips is demonstrated on plastic, metal and glass substrates. Beyond process simplicity, UTTB can be tailored to meet specific applicationExpand
Large-area femtosecond laser ablation of Silicon to create membrane with high performance CMOS-SOI RF functions
Femtosecond laser processing is a tool of increasing relevance for controlled etching of metals, semiconductors, and dielectrics with minimum collateral damage. We make use of this technique toExpand
SOI technology for front end applications
  • Z. Shaked, P. Hurwitz, +4 authors M. Racanelli
  • Computer Science
  • 2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS)
  • 2015
TLDR
This paper will describe such RFSOI platform for RF switches, the process optimizations and the devices offering required for efficient FEM design. Expand
Cellular antenna switches for multimode applications based on a Silicon-on-Insulator technology
A Silicon-on-Insulator (SOI) CMOS technology on high resistivity silicon substrates is presented for the design of cellular antenna switches. The design and measurement results for an SP9T cellularExpand
Identification of RF Harmonic Distortion on Si Substrates and its Reduction Using a Trap-Rich Layer
Harmonic distortion (HD) is measured arising from coplanar waveguide structures on various substrates at 900 MHz, and significant distortion for silicon substrates is demonstrated for the first time.Expand
Requirements for reconfigurable 4G front-ends
This talk will present the stringent requirements of 4G systems, and the goals that reconfigurable circuits must achieve for a successful insertion in multi-band 4G front-ends. Despite of everExpand
Flipping the CMOS Switch
As CMOS technology is scaled down and adopted for many RF and millimeter-wave radio systems, design of T/R switches in CMOS has received considerable attention. Many T/R switches designed in 0.5 ¿mExpand
150-GHz RF SOI-CMOS Technology in Ultrathin Regime on Organic Substrate
This letter provides an experimental demonstration of high-performance industrial MOSFETs thinned down to 5.7 μm and transferred onto a 125-μm-thick polyethylene naphthalate foil. The die stackExpand
Non-linear absorption of focused femtosecond laser pulses at 1.3 μm inside silicon: Independence on doping concentration
Abstract We investigate experimentally local non-linear absorption when 1.3 μm wavelength femtosecond pulses are tightly focused inside n-type doped silicon. We show that 130 fs pulses with only fewExpand
A SPDT RF switch small- and large-signal characteristics on TR-HR SOI substrates
This paper evaluates the small- and large-signal characteristics of a single pole double thru (SPDT) RF antenna switch including its insertion loss, isolation and non-linear behavior. It isExpand
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