Minimum power loss for high-side power MOSFETs in DC-DC converter with TBO and high cell density


For the Synchronous DC-DC converter switching performance of low-voltage power MOSFETs, the gate-drain charge density (Qgd) is an important parameter. The so-called figure-of-merit, which is defined as the product of the specific on-resistance (Ron.sp) and Qgd is commonly used to quantify the switching performance for a specified off-state breakdown voltage… (More)


11 Figures and Tables