Miniaturized SiGe V-Band Active Transmit Balun

Abstract

A miniaturized V-band active transmit balun suitable for direct attachment to an integrated on-chip dipole antenna is proposed in this work. The circuit is constructed using a 0.35 μm SiGe HBT bipolar process (Infineon fT / fmax=170/250 GHz) operating at 55-65 GHz is fabricated and measured. The circuit exhibits a more than 11 dB conversion gain with… (More)

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Cite this paper

@inproceedings{Zhang2012MiniaturizedSV, title={Miniaturized SiGe V-Band Active Transmit Balun}, author={Jian Zhang and Guochi Huang and Vincent F. Fusco}, year={2012} }