Miniaturized Quad-Band Front-End Module for GSM using Si BiCMOS and passive integration technologies

@article{Graauw2006MiniaturizedQF,
  title={Miniaturized Quad-Band Front-End Module for GSM using Si BiCMOS and passive integration technologies},
  author={A. J. M. de Graauw and Andre van Bezooijen and C. Chanlo and A. den Dekker and J P Dijkhuis and S. Pramm and H.K.J. ten Dolle},
  journal={2006 Bipolar/BiCMOS Circuits and Technology Meeting},
  year={2006},
  pages={1-4}
}
The paper presents a highly miniaturized front end module (FEM) for GSM. The module consists of pure silicon BiCMOS RF power amplifier (PA) chip, a BiCMOS die for bias/control functions and a pHEMT switch die, all flipped on a passive integration die, which is mounted on an organic laminate substrate. All passives are integrated. Partitioning of passives is… CONTINUE READING