Millimeter-wave bias dependent model for GaAs pHEMT based on S-parameters

Abstract

0.1 μm gate length GaAs pHEMT having gate peripheries of 2×25 μm (number of gate finger × unit gate width) is fabricated on the 2mil (50.8 μm) GaAs/AlGaAs/InGaAs substrate using PP10-10 process. This work presents a measurement based bias dependent model for a 2×25 μm GaAs pHEMT. Measurement includes pulsed I-V and on wafer scattering parameters for the… (More)

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