Millimeter-Wave GaN HEMT for Power Amplifier Applications

@article{Joshin2014MillimeterWaveGH,
  title={Millimeter-Wave GaN HEMT for Power Amplifier Applications},
  author={Kazukiyo Joshin and Kozo Makiyama and Shiro Ozaki and Toshihiro Ohki and Naoya Okamoto and Yoshitaka Niida and Masaru Sato and Satoshi Masuda and Keiji Watanabe},
  journal={IEICE Transactions},
  year={2014},
  volume={97-C},
  pages={923-929}
}
Gallium nitride high electron mobility transistors (GaN HEMTs) were developed for millimeter-wave high power amplifier applications. The device with a gate length of 80 nm and an InAlN barrier layer exhibited high drain current of more than 1.2 A/mm and high breakdown voltage of 73 V. A cut-off frequency fT of 113 GHz and maximum oscillation frequency fmax of 230 GHz were achieved. The output power density reached 1 W/mm with a linear gain of 6.4 dB at load-pull measurements at 90 GHz. And we… CONTINUE READING

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Ultrascaled InAlN/GaN high electron mobility transistors with cutoff frequency of 400 GHz

  • Y. Yue, Z. Hu, +12 authors H. G. Xing
  • Jpn. J. Appl. Phys., vol.52, no.8S, pp.08JN14-1-2…
  • 2013
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