Miller ' s Approximation in VLSI and Power Bipolar Transistors with Reach-Through Collectors

@inproceedings{Kumar2006MillerS,
  title={Miller ' s Approximation in VLSI and Power Bipolar Transistors with Reach-Through Collectors},
  author={M. Jagadesh Kumar and Krishanu Datta},
  year={2006}
}
Using a modified ionization model based on nonlocal impact ionization, Miller's relationship is examined for typical reach-through collector VLSI bipolar transistors with collector epi-thickness between 0.025 and 1 /im. The empirical parameter n in Miller's relationship is evaluated under nonlocal impact ionization conditions within the useful range of… CONTINUE READING