Mid-infrared (8.5 μm) semiconductor lasers operating at room temperature

@article{Sirtori1997Midinfrared,
  title={Mid-infrared (8.5 μm) semiconductor lasers operating at room temperature},
  author={Carlo Sirtori and J{\'e}r{\^o}me Faist and Federico Capasso and D. Sivco and A M Hutchinson and A. T. Cho},
  journal={IEEE Photonics Technology Letters},
  year={1997},
  volume={9},
  pages={294-296}
}
The room-temperature pulsed operation of a semiconductor laser emitting at 8.5 /spl mu/m is reported. This device is an optimized vertical transition quantum cascade (QC) laser. At 300 K the peak output power from a single facet is 15 mW, and the current density at threshold is /spl sim/8 kA/cm/sup 2/. The temperature dependence of the threshold current… CONTINUE READING