Microwave nanotube transistor operation at high bias

@inproceedings{Yu2006MicrowaveNT,
  title={Microwave nanotube transistor operation at high bias},
  author={Zhuohua Yu and Chad Burke},
  year={2006}
}
We measure the small signal, 1GHz source-drain dynamical conductance of a back-gated single-walled carbon nanotube field effect transistor at both low and high dc bias voltages. At all bias voltages, the intrinsic device dynamical conductance at 1GHz is identical to the low frequency dynamical conductance, consistent with the prediction of a cutoff frequency much higher than 1GHz. This work represents a significant step towards a full characterization of a nanotube transistor for rf and… CONTINUE READING

Figures from this paper.

Citations

Publications citing this paper.
SHOWING 1-10 OF 14 CITATIONS

Ultrahigh Frequency Carbon Nanotube Transistor Based on a Single Nanotube

VIEW 12 EXCERPTS
CITES BACKGROUND & RESULTS
HIGHLY INFLUENCED

Measurement of extreme impedances

Generalized method for broadband measurement of extreme impedances