Microwave Heterojunction Devices

  • Keiichi Ohata
  • Published 1989 in 1989 19th European Microwave Conference

Abstract

High quality heterostructures, especially of compound semiconductors have realized superior performance microwave and millimeterwave devices to GaAs MESFETs. Activities on such heterojunction devices in Japan are reviewed and discussed. The works on modulation-doped heterostructure devices, hetero MISFETs, hetero junction bipolar transistors(HBTs) and… (More)

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