Microwave Characteristics of an Independently Biased 3-Stack InGaP/GaAs HBT Configuration

@article{Luong2017MicrowaveCO,
  title={Microwave Characteristics of an Independently Biased 3-Stack InGaP/GaAs HBT Configuration},
  author={Manh Duy Luong and Ryo Ishikawa and Yoichiro Takayama and Kazuhiko Honjo},
  journal={IEEE Transactions on Circuits and Systems I: Regular Papers},
  year={2017},
  volume={64},
  pages={1140-1151}
}
This paper investigates various important microwave characteristics of an independently biased 3-stack InGaP/GaAs heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) chip at both small-signal and large-signal operation. By taking the advantage of the independently biased functionality, bias condition for individual transistor can be adjusted flexibly, resulting in the ability of independent control for both small-signal and large-signal performances. It was… CONTINUE READING
0 Citations
21 References
Similar Papers

References

Publications referenced by this paper.
Showing 1-10 of 21 references

Darlington circuit semiconductor device

  • K. Nawa, M. Iwasaki
  • U.S. Patent 4 138 690, Feb. 6, 1979.
  • 1979
Highly Influential
4 Excerpts

Similar Papers

Loading similar papers…