Microstructure of laterally overgrown GaN layers

@article{LilientalWeber2001MicrostructureOL,
  title={Microstructure of laterally overgrown GaN layers},
  author={Z. Liliental-Weber and D. Cherns},
  journal={Journal of Applied Physics},
  year={2001},
  volume={89},
  pages={7833-7840}
}
  • Z. Liliental-Weber, D. Cherns
  • Published 2001
  • Physics
  • Journal of Applied Physics
    • Transmission electron microscopy study of plan-view and cross-section samples of epitaxial laterally overgrown (ELOG) GaN samples is described. Two types of dislocation with the same type of Burgers vector but different line direction have been observed. It is shown that threading edge dislocations bend to form dislocation segments in the c plane as a result of shear stresses developed in the wing material along the stripe direction. It is shown that migration of these dislocations involves… CONTINUE READING
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