Microstructure development and electrical properties of RuO2-based lead-free thick film resistors

@article{Busana2006MicrostructureDA,
  title={Microstructure development and electrical properties of RuO2-based lead-free thick film resistors},
  author={M. G. Busana and M. Prudenziati and J. Hormadaly},
  journal={Journal of Materials Science: Materials in Electronics},
  year={2006},
  volume={17},
  pages={951-962}
}
Lead-free thick film resistive compositions suitable for hybrid microelectronics were prepared. The compositions were made with RuO2 as the conducting phase and bismuthate glasses. This blend of bismuthate glasses constitutes a suitable choice for avoiding negative effects such as devitrification, bleeding out of the glass on alumina substrates, anomalous distribution of conductive grains in the glassy matrix and phase separation observed in other systems. The morphology, microstructure and… Expand
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