Microstructure and open-circuit voltage of n−i−p microcrystalline silicon solar cells

@article{Bailat2003MicrostructureAO,
  title={Microstructure and open-circuit voltage of n−i−p microcrystalline silicon solar cells},
  author={J. Bailat and E. Vallat-Sauvain and L. Feitknecht and C. Droz and A. Shah},
  journal={Journal of Applied Physics},
  year={2003},
  volume={93},
  pages={5727-5732}
}
  • J. Bailat, E. Vallat-Sauvain, +2 authors A. Shah
  • Published 2003
  • Physics
  • Journal of Applied Physics
  • A series of microcrystalline silicon n−i−p solar cells has been deposited by very high frequency plasma enhanced chemical vapor deposition at various values of silane to hydrogen source gas ratio and on two different substrate types. Relationships between microstructure and electrical characteristics of these solar cells are investigated by transmission electron microscopy, atomic force microscopy, and I(V) measurements. A mixed phase (so-called heterophase) layer consisting of amorphous plus… CONTINUE READING
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