Microscopic model for the stacking-fault potential and the exciton wave function in GaAs

  title={Microscopic model for the stacking-fault potential and the exciton wave function in GaAs},
  author={M V Durnev and Mikhail M. Glazov and Xiayu Linpeng and Maria L K Viitaniemi and Bethany E. Matthews and Steven R. Spurgeon and Peter V. Sushko and Andreas Dirk Wieck and Arne Ludwig and Kai-Mei C. Fu},
  journal={Physical Review B},
Two-dimensional stacking fault defects embedded in a bulk crystal can provide a homogeneous trapping potential for carriers and excitons. Here we utilize state-of-the-art structural imaging coupled with density functional and effective-mass theory to build a microscopic model of the stacking-fault exciton. The diamagnetic shift and exciton dipole moment at different magnetic fields are calculated and compared with the experimental photoluminescence of excitons bound to a single stacking fault… 
2 Citations

Quantitative STEM Imaging and Multislice Simulation of Stacking Fault Defects for Exciton Trapping in GaAs

Control of defects in bulk semiconductors such as GaAs is essential to realize novel excitonic phases for emerging quantum devices. In these systems, stacking fault (SF) defects are common, leading



Giant permanent dipole moment of two-dimensional excitons bound to a single stacking fault

Two-dimensional potentials are excellent test beds for the physics of interacting excitonic gases, but engineering highly homogeneous potentials can be challenging. In this work, the authors

Direct experimental determination of the spontaneous polarization of GaN

We present a universal approach for determining the spontaneous polarization Psp of a wurtzite semiconductor from the emission energies of excitons bound to the different types of stacking faults in

Exciton Bound to 1D Intersection of Stacking Fault Plane with a ZnSe Quantum Well

Emerging part of condensed matter science, which deals with the systems of extreme two‐dimensionality, renews the interest in natural 2D objects such as planar stacking faults (SFs) in semiconductor

Trapping indirect excitons in a GaAs quantum-well structure with a diamond-shaped electrostatic trap.

The diamond electrostatic trap is reported, which uses a single electrode to create a confining potential for excitons and behaves as a smooth parabolic potential which realizes a cold and dense exciton gas at the trap center.

Accurate band gaps of semiconductors and insulators with a semilocal exchange-correlation potential.

This semilocal exchange potential, which recovers the local-density approximation for a constant electron density, mimics very well the behavior of orbital-dependent potentials and leads to calculations which are barely more expensive than LDA calculations, which can be applied to very large systems in an efficient way.

Modeling the electronic properties of GaAs polytype nanostructures: Impact of strain on the conduction band character

We study the electronic properties of GaAs nanowires composed of both the zincblende and wurtzite modifications using a ten-band k.p model. In the wurtzite phase, two energetically close conduction

Calculation of direct and indirect excitons in GaAs/Ga1−xAlxAs coupled double quantum wells : the effects of in-plane magnetic fields and growth-direction electric fields

The variational procedure, in the effective-mass and parabolic-band approximations, is used in order to investigate the effects of crossed electric and magnetic fields on the exciton states in

Microphotoluminescence of oval defects in a GaAs layer grown by molecular beam epitaxy

Using a low-temperature microphotoluminescence method, we have investigated the optical properties of oval defects in a GaAs layer grown by molecular beam epitaxy. The photoluminescence (PL) spectra

Formation of -space indirect magnetoexcitons in double-quantum-well direct-gap heterostructures

The spectrum of excitons in a double-quantum-well structure is calculated in a tilted magnetic field. It is shown that the spectrum becomes asymmetric in quasimomentum if the component of the

Optical visualization of radiative recombination at partial dislocations in GaAs

Individual dislocations in an ultra-pure GaAs epi-layer are investigated with spatially and spectrally resolved photoluminescence imaging at 5 K. We find that some dislocations act as strong