Microscopic model for the stacking-fault potential and the exciton wave function in GaAs

@article{Durnev2020MicroscopicMF,
  title={Microscopic model for the stacking-fault potential and the exciton wave function in GaAs},
  author={M V Durnev and Mikhail M. Glazov and Xiayu Linpeng and Maria L K Viitaniemi and Bethany E. Matthews and Steven R. Spurgeon and Peter V. Sushko and Andreas Dirk Wieck and Arne Ludwig and Kai-Mei C. Fu},
  journal={Physical Review B},
  year={2020}
}
Two-dimensional stacking fault defects embedded in a bulk crystal can provide a homogeneous trapping potential for carriers and excitons. Here we utilize state-of-the-art structural imaging coupled with density functional and effective-mass theory to build a microscopic model of the stacking-fault exciton. The diamagnetic shift and exciton dipole moment at different magnetic fields are calculated and compared with the experimental photoluminescence of excitons bound to a single stacking fault… 
2 Citations

Quantitative STEM Imaging and Multislice Simulation of Stacking Fault Defects for Exciton Trapping in GaAs

Control of defects in bulk semiconductors such as GaAs is essential to realize novel excitonic phases for emerging quantum devices. In these systems, stacking fault (SF) defects are common, leading

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