Microscopic effects of Dy doping in the topological insulator Bi2Te3

  title={Microscopic effects of Dy doping in the topological insulator Bi2Te3},
  author={L. B. Duffy and N.-J. Steinke and J. Krieger and A. Figueroa and K. Kummer and T. Lancaster and S. Giblin and F. Pratt and S. Blundell and T. Prokscha and A. Suter and S. Langridge and V. Strocov and Z. Salman and G. D. Laan and T. Kingdom and Isis Rutherford Appleton Laboratory United Kingdom and Laboratory for Muon Spin Spectroscopy Paul Scherrer Institut Switzerland and Laboratorium fur Festkorperphysik ETH-Honggerberg and Zurich Switzerland and D. Kingdom and European Synchrotron Radiation Facility Grenoble France and Centre for Materials Physics Durham University Durham Uni Kingdom and S. Physics and Astronomy Cardiff University Cardiff United Kingdom and Swiss Light Source Paul Scherrer Institute Villigen Switzerland},
  journal={Physical Review B},
  • L. B. Duffy, N.-J. Steinke, +23 authors Swiss Light Source Paul Scherrer Institute Villigen Switzerland
  • Published 2018
  • Materials Science, Physics
  • Physical Review B
  • Magnetic doping with transition metal ions is the most widely used approach to break time-reversal symmetry in a topological insulator (TI)—a prerequisite for unlocking the TI’s exotic potential. Recently, we reported the doping of Bi2Te3 thin films with rare-earth ions, which, owing to their large magnetic moments, promise commensurately large magnetic gap openings in the topological surface states. However, only when doping with Dy has a sizable gap been observed in angle-resolved… CONTINUE READING
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