Micrometer-scale ballistic transport in encapsulated graphene at room temperature.

@article{Mayorov2011MicrometerscaleBT,
  title={Micrometer-scale ballistic transport in encapsulated graphene at room temperature.},
  author={Alexander S. Mayorov and Roman V. Gorbachev and Sergey V. Morozov and Liam Britnell and Rashid Jalil and Leonid A. Ponomarenko and Peter N. Blake and Kostya S. Novoselov and Kenji Watanabe and Takashi Taniguchi and Andre K Geim},
  journal={Nano letters},
  year={2011},
  volume={11 6},
  pages={2396-9}
}
Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport at a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric. 
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