Micromachined High-Q Inductors in 0 . 18 μ m Cu Interconnect Low-K CMOS Process

@inproceedings{Lakdawala2001MicromachinedHI,
  title={Micromachined High-Q Inductors in 0 . 18 μ m Cu Interconnect Low-K CMOS Process},
  author={Hasnain Lakdawala and Xu Zhu and Hao Luo and Suresh Santhanam and Rick Carley and Gary K. Fedder},
  year={2001}
}
Spiral inductors fabricated in a 0.18μm 6-level Cu interconnect low-K dielectric process suspended 100μm above the substrate with sidewall oxide removed are described. A maskless post-CMOS micromachining process has been developed for the low-K dielectric copper interconnect process. Post-CMOS process enhancements of inductors provide higher quality factors and self-resonant frequencies by undercutting silicon to eliminate substrate losses and etching inter-turn dielectrics to reduce self… CONTINUE READING
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