Microelectromechanical HF resonators fabricated using a novel SOI-based low-temperature process

This paper reports on a novel silicon-on-insulator (SOI) based low-temperature fabrication process to realize microelectromechanical high-frequency resonators. Key features of the devices are single-crystal silicon resonant beams, 400-nm or 600-nm thin transducer gaps, and gold electrodes. The fabrication process combines bulk silicon micromachining… CONTINUE READING