Micro-interconnection reliability: Thermal, electrical and mechanical stress

Abstract

The results of stress tests on 50 μm-pitch Pb-free microbump interconnect 3D Si structures are summarized. It was found that thermal processes alone compete strongly with electromigration at stress currents of 50 and 100 mA. Typical test sites exhibited a gradual increase in relative resistance increase over time. While large changes in bump interconnection… (More)

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