Micro‐Transfer‐Printed III‐V‐on‐Silicon C‐Band Semiconductor Optical Amplifiers
@article{Haq2020MicroTransferPrintedIC, title={Micro‐Transfer‐Printed III‐V‐on‐Silicon C‐Band Semiconductor Optical Amplifiers}, author={Bahawal Haq and Sulakshna Kumari and Kasper Van Gasse and Jing Zhang and Agnieszka M. Gocalinska and Emanuele Pelucchi and Brian Corbett and Gunther Roelkens}, journal={Laser \& Photonics Reviews}, year={2020}, volume={14} }
The micro‐transfer‐printing of prefabricated C‐band semiconductor optical amplifiers (SOAs) on a silicon waveguide circuit is reported. The SOAs are 1.35 mm in length and 40 µm in width. Dense arrays of III‐V SOAs are fabricated on the source InP wafer. These can then be micro‐transfer‐printed on the target SOI photonic circuits in a massively parallel fashion. Additionally, this approach allows for greater flexibility in terms of integrating different epitaxial layer structures on the same SOI…
26 Citations
Micro-transfer-printed III-V-on-silicon C-band distributed feedback lasers
- Physics
- 2020
: We report on single-mode C-band distributed feedback lasers fabricated through micro-transfer-printing of semiconductor optical amplifier coupons fabricated on a InP source wafer onto a…
Micro-transfer-printed III-V-on-silicon C-band distributed feedback lasers.
- PhysicsOptics express
- 2020
Micro-transfer printing-based heterogeneous integration is promising for the wafer-level integration of advanced laser sources on complex silicon photonic integrated circuit platforms without changing the foundry process flow.
Low Noise Heterogeneous III‐V‐on‐Silicon‐Nitride Mode‐Locked Comb Laser
- PhysicsLaser & Photonics Reviews
- 2021
Generating optical combs in a small form factor is of utmost importance for a wide range of applications such as datacom, LIDAR, and spectroscopy. Electrically powered mode‐locked diode lasers…
Hybrid external-cavity lasers (ECL) using photonic wire bonds as coupling elements
- PhysicsScientific reports
- 2021
This paper demonstrates a novel class of hybrid ECL that combines the scalability advantages of monolithic integration with the performance and flexibility of hybrid multi-chip assemblies and may open a path towards integrated ECL on a wide variety of integration platforms.
Low-Threshold, High-Power On-Chip Tunable III-V/Si Lasers with Integrated Semiconductor Optical Amplifiers
- PhysicsApplied Sciences
- 2021
Heterogeneously integrated III-V/Si lasers and semiconductor optical amplifiers (SOAs) are key devices for integrated photonics applications requiring miniaturized on-chip light sources, such as in…
High-pulse-energy III-V-on-silicon-nitride mode-locked laser
- PhysicsAPL Photonics
- 2021
Mode-locked lasers find their use in a large number of applications, for instance, in spectroscopic sensing, distance measurements, and optical communication. To enable widespread use of mode-locked…
Integration of high performance GaN LEDs for communication systems and smart society
- Physics2022 IEEE 72nd Electronic Components and Technology Conference (ECTC)
- 2022
In this work, we report on releasing GaN-on-Si LEDs from their original substrate and micro-transfer printing them into miniature reflective cavities with different depths to enhance the forward…
Influence of optical amplifiers for on-chip homodyne laser Doppler vibrometers
- PhysicsJournal of Physics: Conference Series
- 2021
Photonic integration allows for the development of compact and relatively cheap laser Doppler vibrometers (LDVs). Optical amplification could enhance the performance of these on-chip LDVs, but the…
Micro-transfer-printed III-V-on-Silicon DBR lasers
- Physics
- 2020
III-V-on-silicon DBR lasers are realized by micro-transfer-printing prefabricated III-V semiconductor optical amplifiers on a silicon waveguide circuit and the effect of misalignment, inherent to the…
References
SHOWING 1-10 OF 24 REFERENCES
Transfer-printing-based integration of a III-V-on-silicon distributed feedback laser.
- PhysicsOptics express
- 2018
An electrically pumped DFB laser integrated on and coupled to a silicon waveguide circuit is demonstrated by transfer printing a 40 × 970 μm2 III-V coupon, defined on aIII-V epitaxial wafer, allowing for the very efficient use of the III- V material and the massively parallel integration of these coupons on a silicon photonic integrated circuit wafer.
Semiconductor optical amplifiers at 2.0‐µm wavelength on silicon
- Physics
- 2017
A semiconductor optical amplifier at 2.0‐µm wavelength is reported. This device is heterogeneously integrated by directly bonding an InP‐based active region to a silicon substrate. It is therefore…
III-V-on-Si photonic integrated circuits realized using micro-transfer-printing
- PhysicsAPL Photonics
- 2019
A promising technology, micro-transfer-printing (μTP), is discussed, which can be realized in a massively parallel manner on a wafer without substantial modifications to the SiPh process flow, leading to a significant cost reduction of the resulting III-V-on-Si PICs.
Optical pumped InGaAs/GaAs nano-ridge laser epitaxially grown on a standard 300-mm Si wafer
- Physics
- 2017
Fully exploiting the potential of silicon photonics requires high-performance active devices such as lasers, which can be monolithically integrated in a scalable way. However, direct bandgap III–V…
Heterogeneous Silicon/III–V Semiconductor Optical Amplifiers
- PhysicsIEEE Journal of Selected Topics in Quantum Electronics
- 2016
We report high output power and high-gain semiconductor optical amplifiers integrated on a heterogeneous silicon/III-V photonics platform. The devices produce 25 dB of unsaturated gain for the…
Transfer Print Integration of Waveguide-Coupled Germanium Photodiodes Onto Passive Silicon Photonic ICs
- PhysicsJournal of Lightwave Technology
- 2018
We demonstrate the integration of waveguide-coupled germanium photodiodes onto passive silicon waveguide circuits by means of transfer printing. This involves the release of the photodiodes from the…
4-channel 200 Gb/s WDM O-band silicon photonic transceiver sub-assembly.
- PhysicsOptics express
- 2020
This electro-optic subassembly provides the highest aggregate data-rate among O-band RM-based silicon photonic transceiver implementations, highlighting its potential for next generation WDM Ethernet transceivers.
Integration of colloidal PbS/CdS quantum dots with plasmonic antennas and superconducting detectors on a silicon nitride photonic platform.
- PhysicsNano letters
- 2019
The method developed in this paper is predicted to scale down to single QDs and newly developed emitters can be readily integrated on the chip-based platform.
Efficient adiabatic silicon-on-insulator waveguide taper
- Physics
- 2014
A silicon-on-insulator-based adiabatic waveguide taper with a high coupling efficiency and small footprint is presented. The taper was designed to reduce the incidence of mode conversion to…
A Hybrid AlGaInAs–Silicon Evanescent Amplifier
- PhysicsIEEE Photonics Technology Letters
- 2007
We report a hybrid AlGaInAs-silicon evanescent amplifier incorporating a silicon waveguide with a III-V gain medium. The optical mode of the hybrid amplifier is mostly confined to the silicon…